X-bit labs

X-bit labs CeBIT 2005 Coverage: Day 6 (page 3)

Category: Editorial

by Anton Shilov

[ 03/17/2005 | 04:37 PM ]

OCZ Technologies Takes DDR Speed to New Levels

OCZ Technology, who said it considered 650MHz DDR speed-bin earlier at the show, now proves its word with actual demonstration. These days OCZ is showing off a system that runs memory at 667MHz, a speed bin for today’s leading-edge DDR2 SDRAM.

  
OCZ’s test setup

Temperature inside Deutsche Messe halls is about 20 degrees, fairly less than inside most of computer cases, furthermore, the firm uses an additional fan for extra stability. But the fact of running DDR SDRAM at 667MHz with CL3 4-4-8 latency settings itself is an interesting one, especially considering that OCZ is currently working on a rather extreme thermal solution for its memory devices that will definitely allow the company to offer higher and higher speed milestones for any type of memory.

OCZ’s 667MHz DDR benchmark scores

OCZ uses DFI’s NVIDIA nForce4-series mainboard and an AMD Athlon 64 processor produced using 90nm process technology to demonstrate its achievement.

Unfortunately, we did not have opportunity to benchmark the system with DDR running at 667MHz, but OCZ demonstrated Sandra benchmark scores of 8419MB/s and 8322MB/s for Int Buffered and Float Buffered bandwidth respectively and even said it had managed to achieve 9000+ scores, but probably with even higher voltage settings of its Platinum DDR600 modules.