OCZ DDR2 PC2-8000 Platinum Extreme Edition
Like Corsair, OCZ Technology is a major trend-setter on the market of enthusiast targeted memory. The company offered an original product for us to test, which has few analogs among competing products. It is 1GHz memory with reduced latencies. OCZ DDR2 PC2-8000 Platinum Extreme Edition modules are capable of working at 1GHz with more aggressive timings than 5-5-5-15 which are customary for that frequency.
The kit consists of two 1GB DDR2 SDRAM modules that work at 2.2V voltage (which is in fact an unofficial standard for overclocker-friendly DDR2 SDRAM). The manufacturer claims the kit is capable of working at 1000MHz with 4-5-4-15 timings. Moreover, OCZ says the DDR2 PC2-8000 Platinum Extreme Edition kit can work at a higher voltage, up to 2.25V, without any risk of damage.
These modules can easily be identified by their looks. They have a very specific heat-spreader that you can only find on OCZ products as yet: meshed copper plates with platinum-color sputtering and a pressed-out letter Z in the middle.
The manufacturer describes these heat-spreaders with the abbreviation “XTC” which spells out as Extreme Thermal Convection. The meshed design indeed enlarges the surface area of the heat-spreader (besides giving it an impressive appearance), which eventually leads to better thermal conditions for the memory chips. The stickers on the heat-spreader tell you the part number, model name and default timings of the module.
The modules’ SPD contains information that complies with the specs: DDR2-1067 SDRAM with 4-5-4-15 timings.
Using chips from Micron, the OCZ DDR2 PC2-8000 Platinum Extreme Edition kit is very similar in characteristics to the competing products from other manufacturers, namely to the Corsair TWIN2X2048-8500C5 and to the Patriot PDC22G8000+XBLK.
The memory from OCZ can be clocked at frequencies above 1GHz at 4-4-4-12 timings. If the timings are relaxed to 5-5-5-15, it reaches a record-breaking frequency of 1145MHz. We guess this result could be improved upon by increasing the memory voltage.