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InformationX-bit Labs for mobile users! Do not forget that we are running a special version of X-bit Labs web-site for users of mobile and handheld devices: http://pda.xbitlabs.com. Check out our news and articles from smartphones and PDAs to be always updated on the latest computer and technology news. <%BANNER[right_130x600]%>
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Articles: Memory
DDR3-1600 SDRAM: Technological Breakthrough or Marketing Trick? (page 6)Category: Memory [ 08/21/2007 | 06:54 PM ] Performance: DDR3-1600 vs. DDR2Memory Subsystem Synthetic BenchmarksFirst of all let’s check out the practical bandwidth and latency of the new DDR3 SDRAM. For our tests we chose Everest Ultimate Edition 4.00 utility.
During reading from the memory DDR2-1200 showed the maximum bandwidth. Even DDR3-1600 with 1/3 higher theoretical speed, cannot outperform the previous generation overclocker memory modules. Looks like the high latencies of DDr3 SDRAM played a bad joke on it. However, DDR2-1000 with the most aggressive timings of 4-4-4-12 reads from the memory slower than DDR3-1600 and than DDR3-1333 with 5-7-5-15 timings.
Writing into memory is limited by the processor bus bandwidth that is why the results of the second Everest test cannot give us any new food for thought.
During file copying within the memory subsystem latency is of utmost importance. That is why the highest score in this test belongs to DDR2-1200 with 5-5-5-15 timings, while DDR3-1333 with 5-7-5-15 timings and DDR2-1000 with 4-4-4-12 timings are in the second place. DDR3 modules with CAS Latency 7 perform much worse here.
The practical latency measurements show that high-speed DDR2 memory outperforms even overclocker DDR3 SDRAM. In other words, today’s race between DDR2 and DDR3 again turns into “bandwidth against latency” competition. Now let’s check out the results of complex benchmarks and real applications <%BANNER[banner_468x30]%>
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Category NewsCategory: Memory Monday, July 21, 20082:13 pm OCZ Technology Unveils First “Fatal1ty” Memory Modules. OCZ Announces Breed of “Fatal1ty” Memory Modules Thursday, July 17, 20088:00 pm Samsung and Sun Claim that Newly Developed Flash Memory for Servers Will Live Longer than Data Processing Servers. Samsung and Sun Develop Ultra Durable Memory for Server Solid State Drives Friday, July 11, 20089:20 pm Rambus Accuses Nvidia of Patent Infringement. Rambus Sues Nvidia of Patent Infringement Thursday, June 26, 200812:40 pm OCZ Technology Set to Manufacture Fatal1ty-Branded Devices. OCZ Plans to Attract Gamers with Fatal1ty Brand Name Thursday, June 19, 20081:12 pm JEDEC Lowers the Power for DDR3. DDR3L to Work at 1.35V All Latest News <%BANNER[right_130x130_1]%>
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