News Archive

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News

Friday, August 30, 2013


Samsung Begins to Mass Produce DDR4 Memory Using 20nm Process Technology. Samsung  DDR4  DRAM  20nm  Intel  Xeon
[7:44 pm]

Samsung Initiates Production of Server-Class DDR4 Memory Chips and Modules

 

Thursday, August 22, 2013


Toshiba Starts Construction of New NAND Flash Memory Production Facility. SanDisk  Toshiba  NAND  Flash  Business
[10:26 pm]

Toshiba Begins to Build Fab 5, Phase 2

 

Monday, August 19, 2013


G.Skill Announces Ripjaws DDR3 SO-DIMM Modules. G.Skill  DRAM  DDR3  Ripjaws
[9:59 pm]

G.Skill Introduces Enthusiast-Class Memory Modules for Laptops

 

Wednesday, August 14, 2013


Rambus: We Are Focused on Products, Not Patents. Rambus  Business
[10:40 pm]

Rambus Vows to Concentrate on Development, Not Lawsuits

Enthusiasts Overclock G.Skill’s TridentX DDR3 Modules to 4.40GHz. G.Skill  DRAM  DDR3  Asus  Haswell  Core  TridentX
[10:20 pm]

New DDR3 Memory Module Clock-Rate Record Set: 4404MHz

 

Tuesday, August 6, 2013


Crossbar Startup Develops 1TB Resistive RAM Technology. Crossbar  RRAM  NAND  Flash  SSD
[10:42 pm]

Crossbar RRAM: 20 Times Faster, 20 Times More Energy Efficient

Samsung Starts Mass Producing Industry’s First 3D Vertical NAND Flash. Samsung  NAND  V-NAND  Flash
[10:37 pm]

Samsung Overcomes NAND Scaling Limit with 3D Vertical NAND Flash