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Hynix Semiconductor announced during IDF Fall 2003 sessions that the DDR-II SDRAM memory modules the chipmaker had submitted for Intel’s evaluation a bit earlier successfully function in an Intel Lindenhurst-based system meant to work with 2-way next-generation Intel Xeon microprocessors.

The mentioned DRAM devices are designed and manufactured on the company’s advanced 0.11 micron Golden Chip process technology. The devices being developed can operate at a data transfer rate of up to 667Mbps per pin at 1.8V and are offered in 128Mx4 bits, 64Mx8 bits, and 32Mx 6 bits configurations in a FBGA package and fully comply with JEDEC DDR-II specifications and standards.

The Hynix 512Mb 400MHz DDR-II SDRAM is currently available in sample quantities with mass production scheduled for early 2004. It means that Hynix is sure about its intention to supply partners with enough DDR-II chips so that they met the beginning of the DDR-II era with Hynix chips.

It looks like more and more memory manufacturers are now ready to ship their samples of DDR-II memories, so, I expect, at least, some of them to make appropriate announcements during the IDF show this week.

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