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Elpida Memory announced the availability of its 1Gb DDR-II SDRAM device. Elpida’s newest DDR-II devices were shipped to customers on 2GB Registered modules developed by Elpida so that customers can quickly and easily evaluate the new devices on next-generation server platforms.

In early November 2003 Elpida unveiled its 2GB PC2-4300 memory modules with ECC support for mission-critical applications. Those devices were scheduled for mass production in the Q2 2004. 2GB PC2-4300 memory modules were based on Elpida’s 512Gb DDR-II chips product on 0.11 micron node using 300mm wafers.

Elpida’s 533MHz 1Gb DDR-II devices are organized as 256M words x 4-bits (8 banks), and 128M words x 8-bits (8 banks). The devices are produced at Elpida’s 300mm fabrication facility in Hiroshima, and they utilize Elpida’s newly developed 0.10 micron process technology. The chips are packed in 68-ball FBGA package. The devices also feature 1.8V power supply with a CAS latency of 3-4-5 and a burst length of 4, 8. They also offer Off-Chip Driver (OCD) Impedance Adjustment and On-Die termination (ODT) for improved signal quality.

4GB Registered dual in-line memory modules (DIMMs) and 2GB SO-DIMMs based on the new 1Gb device are currently under development and will be available soon, Elpida said.

Operation of those test modules build upon 2Gb DDR-II DRAM was confirmed on Elpida’s server system boards prior to shipping. These modules were provided as a courtesy to customers solely for the purpose of testing Elpida’s 1Gb DDR-II devices.

Elpida’s 1 Gigabit DDR-II device also allows both DDR and DDR-II to be integrated on the same chip, making customer requests for conventional DDR SDRAM easy to achieve by switching between DDR and DDR-II via a metal option during the manufacturing cycle.

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