The world’s first NOR flash memory device on 90nm manufacturing technology was announced by Intel Corporation at the recent IDF show. The new device is expected to be cost-effective and enable Intel to increase flash production.

According Intel’s Sean Maloney, Intel’s Wireless Flash Memory manufactured on 90nm fabrication technology has about 50% smaller die size compared to the previous generation, which will lower costs and double Intel manufacturing capability. The new flash devices combine four innovations from Intel: low 1.8V operation, direct code execution (execute-in-place), enhanced factory programming and dual code and data storage in one chip.

Intel Wireless Flash Memory on 90nm process technology is the latest member of the Intel Stacked Chip Scale Packaging (Stacked-CSP) product line. By offering a common package pin out and Intel flash software solutions across a range of densities, stacked flash memory integration and upgrades are easily made and enable device designers to pack more memory into less space. Intel combines its flash memory products with flexible RAM options to offer densities up to 1Gb in a small package size of 8mm x 11mm.

Intel Wireless Flash Memory based on 90nm process technology will sample in April in densities of 64Mb. Volume production is planned for the third quarter of this year, with a suggested price of $10.26 in 10000-unit quantities. Intel plans to sample MLC Intel StrataFlash Wireless Memory on 90nm later this year. These MLC devices will include 256Mb and 512Mb discrete densities and will offer various stacked configurations.