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The world’s largest DRAM supplier Samsung Electronics said that it had developed a 70nm fabrication technology for dynamic random access memory chips production. It is reported that the verification of technology is completed.

Samsung said it utilized metal electrodes as condensers instead of silicon condensers in developing the 70nm process technology, according to South Korean Yonhap News Agency quoted by ShanghaiDaily.

In November 2003 Samsung Electronics unveiled 4Gb NAND flash memory chips made using 80nm and 70nm fabrication processes. Samsung’s 70nm process for DRAM production is the world’s thinnest process for memory making and is patent pending.

“We completed verifying the commercialization of the new technology by applying it to making 70nm 512-megabit DRAM chips,” a Samsung official was quoted by Yonhap as saying.

Samsung Electronics did not unveil timeframes of actual availability of DRAMs produced using 70nm fabrication process.

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