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Micron Technology announced plans to produce NAND flash memory solutions targeting memory cards, USB devices and other mass storage applications. Entering the market Micron sets quite solid goals for itself.

“Micron is entering the NAND market aggressively, starting with the introduction of our first device on 90nm followed by process migrations to 72nm and then 58nm. Our NAND roadmap reflects multiple configurations and density migrations up to 16Gb. We anticipate ramping production quickly to meet the forecasted market demand,” said Jan du Preez, Micron’s Vice President of Networking and Communication.

Diversification with products including NAND, CellularRAM devices, RLDRAM II devices and CMOS image sensors presents significant opportunities for Micron to leverage its core competencies in DRAM product and process technology. Additionally, NAND compliments Micron’s existing product portfolio and further enables the company to support customers as a pure semiconductor manufacturer.

By the end of 2004, Micron anticipates bringing its first NAND flash solution, a 2Gb component, to market. With the flash card market starting to transition from 128MB to 256MB density NAND as the volume leader, the 2Gb density enables Micron to offer the right NAND flash density at the right time to meet these core removable storage market requirements.

The growing demand for high-performance, low-cost flash solutions in mobile applications positions NAND flash as the fastest-growing semiconductor segment in the market.

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