A report over DigiTimes web-site suggests that Samsung Electronics, the world’s largest memory manufacturer, is attempting to begin manufacturing its DDR2 memory chips using industry’s thinnest process technology for DRAMs.

If the information is correct, Samsung will be the first DRAM company to begin the transition to 90nm process technology. The report suggests that initially the company will produce 512Mb DDR2 devices at 400MHz, 533MHz and 667MHz speed-bins. Mass production using 90nm process technology is slated to begin in late 2004 or early 2005.

High-speed dynamic random access memory chips are cheaper to produce using thinner manufacturing technology. 90nm and 100nm and more advanced processes are likely to enable more cost-effective DDR2 products at speeds of 533MHz and 667MHz, which is likely to speed up the transition to DDR2. Other leading memory makers, such as Elpida and Hynix, tend to produce high-performance DDR2 products using 0.10 micron technology.

Samsung said in a July 16, 2004, conference call that it is starting to use 90nm technology for producing DRAM and expects the technology to account for 3% of its wafer starts this quarter and 5% next quarter. However, it did not indicate whether the technology would be used for DDR2, the web-site notes.