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Elpida Memory, the world’s the world’s fifth largest maker of dynamic random access memory, announced initiation of production using 90nm process technology. The thinner manufacturing process can reduce production cost and lead to more affordable DDR2 SDRAM.

“Elpida continuously leverages its strength in manufacturing and process technology to create substantial improvements in our capacity and production yield of high-performance DRAM products. Our ability to begin DDR2 SDRAM production at 90 nm will help Elpida meet growing industry demand for high-density, high-speed DRAM such as DDR2-533 and DDR2-667,” said Yukio Sakamoto, president and CEO of Elpida Memory.

Elpida’s 512Mb devices produced at 90nm process technology will be rated to operate at 533MHz (CL4 4-4), 667MHz (CL4 4-4 and CL5 5-5) as well as 800MHz (CL5 5-5) with 1.8V supply voltage. Sample products are scheduled to become available in June and volume production based on market demand is anticipated in the 2nd quarter of the fiscal year ending March 31, 2006.

Until now, Elpida has been producing its 512Mb density devices using its 100nm process. The company anticipates an increase in productivity by about 40% from its new 90nm production process, which means that about 40% more memory chips can be obtained from a single silicon wafer when compared to the previous process technology.

Elpida’s 90nm fabrication process is deployed at the company’s E300 facility in Hiroshima, Japan. The fab uses 300mm wafers.

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