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Elpida Memory announced that it had developed its first 2Gb DDR2 memory device using 80nm process technology. This will allow the company to power 4GB and 8GB memory modules for servers by the end of Q1 2006. The announcement comes about 9 month after the first demonstration of similar product by Samsung, which has not yet initiated its mass production.

“Elpida always remains focused on its ability to deliver high-performance DRAM products that utilize advanced process technology. 2 Gigabit DDR2 SDRAM is the highest density DRAM device available in the industry, and our ability to establish its development at 80nm demonstrates our readiness to support high-speed products, such as DDR2-800, that are required by the high-performance computing market,” said Yukio Sakamoto, president and CEO of Elpida Memory.

Elpida’s said its 2Gb 80nm chips would be able to operate using the same current as its 1Gb DDR2 DRAMs, which therefore provides double the density without an increase in power requirements. Elpida did not reveal technical specs of its 2Gb DDR2 chips, but indicated that it would be able to function at 800MHz.

The 80nm process technology also allows die to be packaged in 68-ball FBGA packages that can be stacked and mounted on a JEDEC-standard (30mm height) registered Dual In-Line Memory Module (DIMM) or on a Fully-Buffered DIMM (FB-DIMM) at 30.35mm height. This flexibility will allow Elpida to realize 4GB and 8GB density DDR2 modules.

Elpida’s 80nm process technology features advanced layout, circuitry and design. It also utilizes an ArF scanner, an advanced lithography technology, which is key in the development of advanced process technology, the company said.

Volume production is expected to begin by the end of this fiscal year, which ends on March 31, 2006, in accordance with market demand. Pricing for these products will be based on market conditions at that time.

Elpida has already deployed commercial manufacturing of DDR2 chips using 90nm process technology.

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