Samsung Electronics, the world’s largest maker of memory chips, said that it had begun manufacturing its 8GB FB-DIMMs targeted at next-generation high-end server applications.

Samsung’s Fully Buffered Dual In-line Memory Module product line-up (FB-DIMM) includes up to 8GB memory modules and adopts the company’s 2Gb chips produced using 80nm process technology. The modules will suit future servers running on Intel’s code-named Blackford chipset.

“OEMs that use Samsung's high-density memory can increase the amount of installed memory and keep slots in reserve for future upgrades. Samsung memory such as the new 8GB FB-DIMM is ideal for space-constrained applications in blade and 1U servers,” the company said in a statement.

The FB-DIMM architecture overcomes the previous limitation of two-to-four module capacity per channel. A FB-DIMM system’s DRAM module content can be increased to as many as eight modules without reducing the speed. The new system can also process an increased amount of data at the same time with the advanced memory buffer (AMB) chip connecting each module in the system point to point. As a result, the server market demand for high density DRAMs is expected to increase significantly.

The FB-DIMM standard has been adopted by JEDEC, providing designers a choice between R-DIMM and FB-DIMM for next generation DRAM and system design. It is designed to add an AMB chip to the existing DRAM module, enabling the DRAM within the module to communicate with the system through this AMB chip.