Qimonda AG, the successor of Infineon’s memory business, and Winbond Electronics Corp. on Tuesday said they had signed an agreement under which the latter would produce memory chips for the former using process technology developed by Qimonda. The agreement is inline with Infineon’s multi-year technology-for-capacity strategy.

“The extension of our cooperation with Winbond underlines our partnership commitment in Asia and it further increases our production capabilities and flexibility,” said Kin Wah Loh, chief executive of Qimonda.

Under the terms of the additional agreement, Qimonda will transfer its 80nm dynamic random access memory (DRAM) trench technology to Winbond’s 300mm facility in Taichung. In return, Winbond will manufacture DRAMs for computing applications in this technology exclusively for Qimonda.

In May 2002 and August 2004, the Winbond and Infineon signed agreements on the transfer and licensing of the 110nm and 90nm DRAM-technologies for Winbond’s 200mm plant in Hsinchu and 300mm plant in Taichung. 

“Our successful collaboration with Qimonda regarding the 110nm and 90nm process technology transfers has paved the way for broadening of our partnership”, said Arthur Chiao, Chairman of Winbond Electronics Corp. “The expansion of the process technology transfer to 80nm is an important step to maintain close collaboration between the two companies in the future”.