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Elpida, a leading supplier of dynamic random access memory (DRAM), on Tuesday said that it had developed DDR3 memory chips that can function at unprecedented clock-speed. The new chips will enable leading developers of memory modules to create even faster memory solutions for computer enthusiasts.

The new memory chips can operate at 667MHz – 2500MHz with 1.2V – 1.5V voltage settings. The new memory devices have an optimized design based on a copper interconnect process and new circuit technology that not only enables faster speeds but also an ultra-low voltage operation of 1.2V while conforming to DDR3 specifications. The chips achieve data rates of 2.5Gb/s at 1.5V and 1.8Gb/s at 1.2V, considerably faster than the current industry standard of 1.6Gb/s at 1.5V.

The new DDR3 SDRAM uses a copper interconnect process that is superior to aluminum in terms of transmission characteristics. By taking maximum advantage of these characteristics during the design phase new circuitry can be developed that enables even faster products that continue to need little power. As a result, the new product’s ability to operate at an ultra low voltage of 1.2V can contribute to lower power consumption, which is especially important in the case of large-memory capacity extended-use server applications.

Sample shipments of  the new copper interconnect-based DDR3 SDRAM are scheduled to begin by the end of August. Also, Elpida plans to use a process shrink to enable the new memory product to achieve even faster speeds and lower voltage.

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