News
 

Bookmark and Share

(0) 

Hynix Semiconductor, Inc. today announced that it is using MetaRAM's new DDR3 technology in its next generation R-DIMMs, including the world's first 16GB 2-rank DIMM (HMT32GR7AER4C-GD), which it will demonstrate at the Intel Developer Forum in San Francisco. Hynix's new 16GB and 8GB (HMT31GR7AER4C-GC) 2-rank DIMMs can triple DDR3 memory capacity in servers and workstations, enabling the world's highest memory capacity per channel without degrading performance.

Intel currently demonstrates the world's first 16GB 2-rank DIMM from Hynix, using the MetaRAM DDR3 chipset, at IDF. Intel also demonstrated a server with 160GB using Hynix DDR3 R-DIMMs and Meta SDRAM technology.



DDR3 MetaRAM is similar to the previous generation DDR2 technology in that it enables significantly more memory in a server. An added benefit of the DDR3 MetaRAM technology is that it enables larger memory capacity without negatively impacting the operating frequency of the DDR3 memory channel. It is the only technology that has been demonstrated to run 24GB of DDR3 SDRAM in a channel working at 1066MHz frequency. As with its earlier DDR2 technology, the DDR3 MetaRAM technology enables Hynix to introduce cost-effective, high capacity R-DIMMs by using mainstream 1 gigabit DRAMs.

The Meta SDRAM chipset, which sits between the memory controller and the DRAM, solves the memory capacity problem cost effectively by enabling up to four times more mainstream DRAMs to be integrated into existing DIMMs without the need for any hardware, or software changes. The chipset makes multiple DRAMs look like a larger capacity DRAM to the memory controller. The result is "stealth" high-capacity memory that circumvents the normal limitations set by the memory controller. The Meta SDRAM technology reduces the number of externally visible ranks on an R-DIMM and reduces the load on the data bus to one-per module. It offers x4 and x8 DIMM interface support and features the MetaRAM WakeOnUse active power management technology to minimize the power consumption of DRAM when it is not actively being used. R-DIMM modules created using this technology are JEDEC compatible.

Tags: Hynix, MetaRAM

Discussion

Comments currently: 0

Add your Comment




Latest News

Monday, July 21, 2014

12:56 pm | Microsoft to Fire 18,000 Employees to Boost Efficiency. Microsoft to Perform Massive Job Cut Ever Following Acquisition of Nokia

Tuesday, July 15, 2014

6:11 am | Apple Teams Up with IBM to Make iPhone and iPad Ultimate Tools for Businesses and Enterprises. IBM to Sell Business-Optimized iPhone and iPad Devices

Monday, July 14, 2014

6:01 am | IBM to Invest $3 Billion In Research of Next-Gen Chips, Process Technologies. IBM to Fund Development of 7nm and Below Process Technologies, Help to Create Post-Silicon Future

5:58 am | Intel Postpones Launch of High-End “Broadwell-K” Processors to July – September, 2015. High-End Core i “Broadwell” Processors Scheduled to Arrive in Q3 2015

5:50 am | Intel Delays Introduction of Core M “Broadwell” Processors Further. Low-Power Broadwell Chips Due in Late 2014