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IM Flash, a joint-venture between Intel Corp. and Micron Technology, on Monday announced mass production of their jointly developed 34nm, 32Gb multi-level cell (MLC) NAND flash memory device. Thanks to think process technology, the chip is the industry’s only monolithic 32Gb NAND chip that fits into a standard 48-lead thin small-outline package (TSOP).

“We have made great strides in NAND process capability and are now in a leadership role with 34nm production. The tiny 34nm, 32 Gb chip enables our customers to easily increase their NAND storage capacity for a number of consumer and computing products,” said Brian Shirley, vice president of Micron’s Memory Group. 

The 34nm, 32Gb chips are manufactured on 300 mm wafers. Measuring just 172mm², less than the size of a thumbnail, the 34nm, 32Gb chip will cost-effectively enable high-density solid-state storage in small form factor applications including digital cameras, personal music players and digital camcorders. Additionally, the chip will enable more cost-effective solid-state drives, increasing their current storage capacity.

The companies are ahead of schedule with 34nm NAND production, expecting their Lehi facility to have transitioned more than 50% of its capacity to 34nm by year’s end.

The companies also plan to begin sampling lower density multi-level cell (MLC) and single-level cell (SLC) products using the 34nm process technology in early 2009.

Tags: Intel, Micron, IM Flash, Flash, 34nm

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