Elpida Memory, a leading supplier of dynamic random access memory (DRAM), said on Wednesday that it has completed the development of 50nm process technology for memory production. Thanks to new fabrication process, the company is now capable of making 2.50GHz DDR3 memory with reduced voltage.
The lineup of DRAMs produced using 50nm process technology includes chips that can work at 800MHz, 1066MHz, 1333MHz, 1600MHz, 1866MHz, 2133MHz and 2500MHz with 1.2V, 1.35V or 1.5V voltage setting.
The new 50nm process DDR3 SDRAM chip was developed using the industry's most advanced 193nm (ArF) immersion lithography technology and copper interconnect technology and has a chip size of less than 40mm2. The new chips operate on not only DDR3 standard 1.5V supply voltage but even lower voltages of 1.35V and 1.2V and can contribute to the low-power operations of high-density memory systems such as servers and data centers.
The new DDR3 SDRAM will initially find applications in high-end desktop PCs. Applications are possible elsewhere based on the current shift away from DDR2 SDRAMs in notebook PCs and server equipment.
Mass production of the new 50nm process DDR3 SDRAM is scheduled to begin in the first quarter of 2009. Elpida is also aggressively developing 50nm process products for high-end digital consumer electronic products and Mobile RAM.