Samsung Electronics, the world’s largest maker of dynamic random access memory, has announced that it had developed the world’s first 4Gb DDR3 memory chip made using 50nm process technology. The new memory chip may power 16GB or even 32GB memory modules for servers or 8GB modules for desktops or workstations.

“We have leveraged our strength in innovation to develop the first 4Gb DDR3, in leading the industry to higher DRAM densities. By designing our 4Gb DDR3 using state-of-the-art 50-nm class technology, we are setting the stage for what ultimately will result in significant cost-savings, for servers and for the overall computing market,” said Kevin Lee, vice president of technical marketing at Samsung Semiconductor.

The 4Gb DDR3 DRAM from Samsung operates at 1.35V, therein improving its throughput by 20% over a 1.5V DDR3, and can achieve speeds of up to 1600MHz.

The 4Gb DDR3 can be produced in 16GB registered dual in-line memory modules (RDIMM) for servers, as well as 8GB unbuffered DIMM (UDIMM) for workstations and desktop PCs, and 8GB small outline DIMM (SODIMM) for laptops. By applying dual-die package technology, this new device can deliver modules of up to 32GB – offering twice as much capacity as memory modules based on the previous highest chip density of 2Gb.

Samsung did not reveal when it plans to be in position to start mass production of its 4Gb DDR3 devices.

In September 2008, Samsung announced its development of the world’s first 50nm-class 2Gb DDR3 DRAM. Now, just five months after, it has established the industry’s broadest line-up of high-performance DDR3 products using 50nm process technology (4Gb, 2Gb, 1Gb).

As forecasts have the amount of memory per server doubling every two years, the development of high-density DRAM is expected to keep pace, expanding to other applications such as notebooks and desktop PCs.

According to the International Data Corporation (IDC), a market research and analysis firm, the worldwide DDR3 DRAM market will account for 29% of the total DRAM market in 2009 and 75%in 2011. In addition, IDC estimates that 2Gb-or-higher DDR3 DRAM will make up 3% of the total DRAM market in 2009 and 33% in 2011 (units in bits).

Tags: Samsung, 50nm