Bookmark and Share


Samsung Electronics, the world’s largest maker of dynamic random access memory (DRAM), on Thursday said it has succeeded in developing 40nm process technology for memory products as well as has successfully validated the first DDR2 memory chips made using the process. According to Samsung, the new manufacturing technology opens doors to both low-power and cost-effective DDR3 as well as DDR4 memory chips.

“Securing extremely advanced technology and system/platform validated operability underscores our commitment as technology leader to deploying the most efficient means of producing DRAM in the marketplace,” said Kevin Lee, vice president of technical marketing at Samsung Semiconductor.

The first memory device to be produced on 40nm node by Samsung is 1Gb DDR2 chip capable of operating at 800MHz. Memory modules based on the new DRAMs have passed Intel Platform Validation program for use with the Intel GM45-series mobile chipsets.

The migration to 40nm class process technology is expected to accelerate the time-to-market cycle by 50% – to just one year, according to Samsung. Samsung plans to apply its 40nm class technology to also develop a 2Gb DDR3 device for mass production by the end of 2009.

Besides, the new 40nm fabrication process will drive further reductions in voltage against a 50nm class device, which Samsung expects to translate into about a 30% power savings. The finer DRAM technology node also delivers an approximately 60% increase in “productivity” over 50nm class process technology.

Thinner manufacturing technologies allow memory makers to produce more chips from a single silicon wafer, which makes chips considerably cheaper to build. Just days ago Qimonda, a struggling DRAM maker, said its 46nm process technology cuts production costs by up to 200% compared to 75nm fabrication process.

In addition, Samsung expects that its 40nm process node will mark a significant step toward the development of next generation, ultra-high performance DRAM technologies, such as DDR4.

Tags: Samsung, 40nm


Comments currently: 1
Discussion started: 02/05/09 03:17:20 PM
Latest comment: 02/05/09 03:17:20 PM


Wow very nice. I would definitely like some DDR3 40 nm sticks for my next rig! Wonder if they will potentially release these this year or the next...
0 0 [Posted by: digitalrurouni  | Date: 02/05/09 03:17:20 PM]


Add your Comment

Related news

Latest News

Wednesday, November 5, 2014

10:48 pm | LG’s Unique Ultra-Wide Curved 34” Display Finally Hits the Market. LG 34UC97 Available in the U.S. and the U.K.

Wednesday, October 8, 2014

12:52 pm | Lisa Su Appointed as New CEO of Advanced Micro Devices. Rory Read Steps Down, Lisa Su Becomes New CEO of AMD

Thursday, August 28, 2014

4:22 am | AMD Has No Plans to Reconsider Recommended Prices of Radeon R9 Graphics Cards. AMD Will Not Lower Recommended Prices of Radeon R9 Graphics Solutions

Wednesday, August 27, 2014

1:09 pm | Samsung Begins to Produce 2.13GHz 64GB DDR4 Memory Modules. Samsung Uses TSV DRAMs for 64GB DDR4 RDIMMs

Tuesday, August 26, 2014

10:41 am | AMD Quietly Reveals Third Iteration of GCN Architecture with Tonga GPU. AMD Unleashes Radeon R9 285 Graphics Cards, Tonga GPU, GCN 1.2 Architecture