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Samsung Electronics, the world’s top maker of dynamic random access memory (DDR3), said on Wednesday that it had begun mass production of 2Gb DDR3 memory chips using 40nm process technology. The new fabrication process should enable low manufacturing costs as well as potentially higher performance.

Samsungs new 2Gb chip made using 40nm process tech supports clock-speeds of up to 1.6GHz at 1.35V. According to Samsung, moving to a 40nm production process will provide around a 60% increase in production productivity over use of a 50nm process, which means considerably lower costs.

“We see market adoption to DDR3 picking up steam and are accommodating that with early entry of 2Gb DDR3 using the most efficient DRAM manufacturing technology available today. This will set the pace for a new standard in premium, eco-friendly DRAM solutions offering the most advanced, low power RDIMM for servers anywhere,” said Jim Elliott, vice president of memory marketing at Samsung Semiconductor.

Besides enabling relatively low-cost 2GB or 4GB DDR3 memory modules for desktops, notebooks or workstations, Samsung itself will make 16GB, 8GB and 4GB RDIMMs for servers.

Potentially, makers of advanced memory modules for performance enthusiasts may utilize Samsung’s new 2Gb DDR3 chips for their next-generation solutions that will need allow end-users to install 8GB or even higher amount memory into PCs.

According to market research firm iSuppli, 2 Gb DDR3 is expected to account for 82 percent of the total DDR3 DRAM market in units sold by 2012, and become the mainstream DDR3 DRAM product by 2010.

Tags: Samsung, DDR3, 2Gb, 40nm


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