Micron Technology, a leading producer of dynamic random access memory and flash, on Monday said that it had started producing of flash memory with improved potential lifespan using 34nm process technology. The company also said that its new single-level cell (SLC) and multi-level cell (MLC) flash can boast with six times longer endurance compared to existing devices.
Micron’s new MLC Enterprise NAND device achieves 30 thousand write cycles – a 6x increase in endurance when compared to standard MLC NAND, according to the company. For enterprise applications that are more performance driven, Micron today also introduced a 34nm SLC Enterprise NAND device that achieves 300 thousand write cycles – a 3x increase in endurance when compared to standard SLC NAND.
“By leveraging our mature 34nm NAND process, Micron has developed Enterprise NAND products that support customers’ high-endurance requirements. These products ensure that enterprise organizations have a highly reliable NAND flash solution – be it MLC or SLC – for design into the broader enterprise storage platform,” said Brian Shirley, vice president of Micron’s memory group.
Additionally, leveraging the full performance capability of NAND, Micron’s newest Enterprise NAND products also support the ONFI 2.1 synchronous interface, delivering a 4- to 5x improvement in data transfer rates when compared to legacy NAND interfaces. Micron’s 34nm Enterprise NAND portfolio includes a 32Gb MLC NAND chip and a 16Gb SLC NAND chip that can be configured into multi-die, single packages supporting densities up to 32GB MLC and 16GB SLC, respectively.
Micron is now sampling its Enterprise NAND products with customers and controller manufacturers, and is expected to be in volume production in early 2010. For further explanation on Micron’s Enterprise NAND products, visit Micron’s Innovations blog to catch a video that describes how Micron leveraged its mature 34nm NAND process to achieve these levels of reliability.