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Micron Technology and Nanya Technology Corp. on Monday announced that they had jointly developed a 2Gb DDR3 memory device using their new copper-based 42nm DRAM process technology.

By shrinking process technology, the new 2Gb 42nm DDR3 device delivers improved memory performance capable of reaching up to 1866MHz. In addition, the small die size coupled with the 2Gb density of the 42nm DDR3 device enables modules up to 16GBs.

The new 42nm process now makes 1.35V the standard, mainstream voltage requirement, compared to 1.5V with previous generations. With increasing memory requirements in servers, it has been estimated that memory power consumption can be up to 21W per module. The 1.35V can provide a savings of up to 30% in server applications, reducing both power and cooling requirements.

Sampling of 2Gb 1866MHz DDR3 chips at 42nm process technology is scheduled to start in the second calendar quarter of 2010, with production ramp planned for the second half of the year.

“With the move to 42nm – and with a 30nm-class process working in our R&D fab in Boise – Micron’s expertise in copper metallization and proprietary cell capacitor technology has enabled us to stay on the cutting-edge of DRAM process design and innovation. The addition of this new 2Gb 42nm device to our DRAM product line strengthens our already rich portfolio of memory solutions for customers’ end applications,” said Robert Feurle, vice president of DRAM marketing at Micron.

According to Micron, the new 42nm DRAM process technology uses the more efficient and reliable copper metallization technology, allowing Micron and Nanya to stay on the leading-edge of process scaling. Micron has long recognized the benefits of copper in aiding DRAM scale, and has continued to leverage and refine the technology for nearly a decade. When compared to other metallization techniques, such as aluminum, copper is recognized as the more extendible, reliable and cost-effective approach for advancing process geometries and enhancing product performance. As Micron and Nanya continue to scale, moving to their next-generation 30nm-class process technology, the companies are building on their strong copper foundation to deliver high-quality and highly reliable products.

Tags: Micron, Nanya, DDR3, DRAM, 42nm

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