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Elpida Memory, a leading supplier of dynamic random access memory (DRAMs) in Japan, has begun sample shipments of 4GB SO-DIMMs based on DDR3 memory chips produced using 30nm process technology. The new chips not only consume less power than predecessors, but are cheaper to manufacture and can potentially work at higher frequencies.

Composed of sixteen 2Gb DRAMs, the new 4GB SO-DIMM module uses 20% less operating current and 30% less standby current compared to a similar module based on chips made using 40nm process technology. The new chips from Elpida also meet the JEDEC specs for the high-speed DDR3-1866 and 1.35V low-voltage DDR3L-1600 memory chip.

The latest 2Gb DDR3 chip from Elpida is made using 30nm process technology that allows to place 45% more chips per wafer compared with Elpida's 40nm process products. Also, the new process design developed by Elpida will help contain rising chip costs associated with process migration. As a result, the new 4GB SO-DIMM products from Elpida are likely to carry relatively affordable price-tags.

Elpida plans to begin mass manufacture of the 4GB DDR3 SO-DIMM in the first quarter of calendar year 2011.

Tags: Elpida, DDR3, DDR3L, DRAM

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