Samsung Electronics, the largest producer of dynamic random access memory (DRAM), on Tuesday said that it completed development of the industry's first DDR4 memory module last month, using 30nm-class process technology.
The new DDR4 DRAM module can achieve data transfer rates of 2133Gb/s at 1.2V, compared to 1.35V and 1.5V DDR3 DRAM at an equivalent 30nm-class process technology, with speeds of up to 1.6Gb/s. When applied to a notebook, it reduces power consumption by 40% compared to a 1.5VDDR3 module.
The module makes use of pseudo open drain (POD), a new technology that has been adapted to high-performance graphic DRAM to allow DDR4 DRAM to consume just half the electric current of DDR3 when reading and writing data. By employing new circuit architecture, Samsung's DDR4 will be able to run from 1.60GHz up to 3.20GHz compared to today's typical speeds of 1.6GHz for DDR3 and 800MHz for DDR2.
Late last month, Samsung provided 1.2V 2GB DDR4 unbuffered dual in-line memory modules (UDIMM) to a controller maker for testing.
"Samsung has been actively supporting the IT industry with our green memory initiative bycoming up with eco-friendly, innovative memory products providing higher performance and power efficiency every year. The new DDR4 DRAM will build even greater confidence in our cutting-edgegreenmemory, particularly when we introduce 4Gb DDR4-based products using next generation process technology for mainstream application," said Dong Soo Jun, president of memory division at Samsung Electronics.
Samsung now plans to work closely with a number of server makers to help insure completion of JEDEC standardization of DDR4 technologies in the second half of this year.