Samsung Electronics, the largest maker of DRAM in the planet, has developed 32GB DDR3 registered dual in-line memory modules (RDIMMs) that use three dimensional (3D) through silicon via (TSV) package technology. The modules are based on Samsung's 30nm DRAM ICs and are designed for next-generation servers powered by multi-core chips.
The new 32GB RDIMM with 3D TSV package technology is based on Samsung's 4Gb DDR3 memory made using 30nm process technology. The new ultra-high density modules can operate at 1333MHz clock-speed, which is a 70% gain over preceding quad-rank 32GB RDIMMs with operational speeds of 800MHz.
The 32GB module consumes a mere 4.5W per hour – the lowest power consumption level among memory modules adopted for use in enterprise servers, according to Samsung. Compared to the 30nm-class 32GB load-reduced DIMM (LRDIMM), which offers advantages in constructing 32GB or higher memory solutions, the new 32GB module provides approximately 30% additional energy savings.
These savings are directly attributable to the adoption of TSV technology, which enables a multi-stacked chip to function at levels comparable to a single silicon chip by shortening signal lines significantly, thereby lowering power consumption and achieving higher density and operational speed.
“These 32GB RDIMMs fully support the high-density and high-performance requirements of next-generation high-capacity servers. We will keep providing memory solutions with higher performance and density, while enhancing shared value in the design of ever-greener server systems,” said Wanhoon Hong, executive vice president of memory sales and marketing at device solutions division of Samsung Electronics.
Samsung has collaborated with CPU and controller designers in addition to some current server system customers to facilitate quicker adoption of 3D-TSV server modules, and to pave the way for more easily supporting 32GB and higher-density memory modules based on 20nm-class DDR3 for use in high-capacity servers.