News
 

Bookmark and Share

(1) 

Micron Technology on Thursday introduced a new product category of low-power DDR3 solutions targeted at the tablet and ultrathin notebook markets. These 2Gb and 4Gb DDR3Lm solutions focus on low self-refresh power (IDD6) for longer battery life, while maintaining the high performance and cost effectiveness of PC DRAM.

The first 2Gb DDR3Lm will provide up to 50% self-refresh power savings versus standard 2Gb DDR3L while driving performance up to 1600MHz when needed. Micron's 4Gb DDR3Lm product delivers the same optimized power efficiency as the 2Gb part, with a reduced chip count that is ideally suited for ultrathin and tablet customers. Both 2Gb and 4Gb DDR3Lm will be adopted into Micron's 30nm-class to further optimize the power and performance features, with the 4Gb device hitting a 3.7mA IDD6 target in standby mode, yet still supporting speeds up to 1866MHz.

"Power reduction is becoming ever more critical in the fast growing ultrathin markets.  Micron's expertise with traditional PC memory requirements enables these markets to enjoy high performance targets and optimal cost efficiencies. The combination of our commitment to customer collaboration and dedication to leading the way in DRAM technologies has proven highly successful, and this new class of 30nm DRAM continues to deliver on that promise," said Robert Feurle, vice president for Micron's DRAM marketing.

Sampling of Micron's new DDR3Lm low-power product line begins now, with volume production on 30nm class devices expected to begin in Q2 2012. Intel Corp. has already supported the idea to further cut power consumption of computer memory and will likely advice its partners to use DDR3Lm for Atom-based tablets as well as ultrabooks.

"As computing becomes more and more mobile, longer battery life is increasingly valuable to end users. The reduced standby power consumption of low-power memory is a move in the right direction," said Geof Findley, Intel's senior memory enabling manager.

Tags: Micron, DDR3, 30nm, DDR3Lm, DRAM

Discussion

Comments currently: 1
Discussion started: 02/09/12 06:20:05 PM
Latest comment: 02/09/12 06:20:05 PM

Add your Comment




Related news

Latest News

Wednesday, October 8, 2014

8:52 pm | Lisa Su Appointed as New CEO of Advanced Micro Devices. Rory Read Steps Down, Lisa Su Becomes New CEO of AMD

Thursday, August 28, 2014

12:22 pm | AMD Has No Plans to Reconsider Recommended Prices of Radeon R9 Graphics Cards. AMD Will Not Lower Recommended Prices of Radeon R9 Graphics Solutions

Wednesday, August 27, 2014

9:09 pm | Samsung Begins to Produce 2.13GHz 64GB DDR4 Memory Modules. Samsung Uses TSV DRAMs for 64GB DDR4 RDIMMs

Tuesday, August 26, 2014

6:41 pm | AMD Quietly Reveals Third Iteration of GCN Architecture with Tonga GPU. AMD Unleashes Radeon R9 285 Graphics Cards, Tonga GPU, GCN 1.2 Architecture

Monday, August 25, 2014

6:05 pm | Chinese Inspur to Sell Mission-Critical Servers with AMD Software, Power 8 Processors. IBM to Enter Chinese Big Data Market with the Help from Inspur