Micron Technology on Monday announced development of its first fully functional DDR4 DRAM module. The company has begun sampling and has received feedback from major customers to support quick implementation for applications in 2013. The firm said it would start mass production of DDR4 memory already this year.

Co-developed by Nanya and based on Micron's 30nm technology, the 4Gb DDR4 x8 part is the first piece of what is expected to be the industry's most complete portfolio of DDR4-based modules, which will include RDIMMs, LRDIMMs, 3DS, SODIMMs and UDIMMs (standard and ECC), said Micron. For the soldered down space, x8, x16, and x32 components will also be available, with initial speeds up to 2400 megatransfers per second (MT/s), increasing to the JEDEC-defined 3.20GHz.

As JEDEC finalizes the DDR4 specifications, Micron is positioned to quickly become fully compliant with its 30nm 4Gb DDR4 part. Full sampling to key partners began earlier this year and volume production is planned for 4Q 2012.

It is expected that the enterprise and micro-server markets will take full advantage of the new features and specifications designed into DDR4, accelerating early adoption of the technology. In addition, the fast-growing ultrathin client and tablet markets will also benefit from new opportunities enabled by the power savings and performance features of Micron's DDR4.

"With the JEDEC definition for DDR4 very near finalization, we've put significant effort into ensuring that our first DDR4 product is as JEDEC-compatible as it can be at this final stage of its development. We have provided samples to key partners in the market place with confidence that the die we give them now is the same die we will take into mass production," said Brian Shirley, vice president for Micron's DRAM solutions group.

Tags: DDR4, Micron, DRAM, Nanya