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Micron Technology on Tuesday introduced its new family of memory devices that are the world's first DDR3 chips officially rated to run at 2133MHz (2.13GHz) effective clock-speed. The new dynamic random access memory (DRAM) products are intended not only for high-end memory modules designed to operate in the range between 2GHz and 3GHz, but also for networking and graphics applications.

Micron's new DRAMs are made using 30nm process technology and are available in 2Gb and 4Gb versions (in x4, x8, and x16 configurations in 78-ball and 96-ball FBGA packages). The official effective speed of the chips is 2133MHz (physical clock-speed is 1066MHz), which is significantly higher than industry-standard 1600MHz and 1866MHz DDR3 speed bins amid similar 1.5V voltage.

The new DDR3 memory products are designed for such bandwidth demanding applications as cost-efficient discrete graphics adapters for which GDDR5 is too expensive, whereas conventional DDR3 memory is too slow; as well as high-speed networking devices. In addition to components that satisfy both the discrete graphics and networking segments, Micron will offer 2133MHz module form-factors, including networking-specific ECC UDIMMs. Once the new chips hit the market, it will be possible to expect ultra-high-end 3GHz+ modules from leading memory module houses.

"High-speed DDR3 will be powering the mainstream graphics and high-performance networking markets in 2012 and beyond. Micron is prepared to support these demanding markets by leveraging our expertise with high-volume, cost-efficient DDR3 products and developing these very high-performance DDR3 devices," said Robert Feurle, vice president of DRAM marketing for Micron.

Samples of Micron's new class of high-performance, low-power DDR3 devices are available now, with volume production ramping by summer.

Tags: Micron, DDR3, DRAM

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