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Samsung Electronics said this week that its new 64Gb eMMC NAND flash memory storage chip for smartphones and tablets memory went into production late last month using 10nm-class process technology.

Samsung is applying eight 64Gb high-performance NAND memory layers produced using its 10nm-class technology to the new 64GB eMMC Pro class 2000 memory solution. The new embedded memory solution exceeds the performance levels of the conventional 64GB eMMC Pro class 1500 based on an eMMC 4.5 interface by 30%. The 64GB eMMC Pro class 2000 measures 11.5mm by 13mm, which represents a 20% reduction in size over the conventional embedded memory form factor (12mm by 16mm).

The new eMMC 64GB Pro 2000 memory solution has a random write speed of 2000 IOPS (input/output per second) and a random read speed of 5000 IOPS. In addition, sequential read and write speeds are 260MB/s and 50MB/s respectively, which is up to 10 times faster than a class 10 external memory card that reads at 24MB/s and writes at 12MB/s, greatly enhancing the smoothness of multitasking on mobile gadgets.

“The new high-speed, small form factor eMMC reinforces Samsung’s technology leadership in storage memory solutions. We look forward to expanding our line-up of embedded memory solutions in conjunction with the new chip’s design, in pursuing a system-level adoption of application processors and other key components that form the foundation for the most advanced mobile platforms. This will allow us to better attend to time-to-market demands enabling the design of more convenient features for next-generation mobile applications,” said Myungho Kim, vice president of memory marketing at device solutions division of Samsung Electronics.

Tags: Samsung, eMMC, NAND, Flash, MLC, 20nm

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