SanDisk Corp. and Toshiba Corp., who jointly operate a NAND flash manufacturing fab in Japan and jointly develop process technologies for memory manufacturing, on Monday announced that the companies have developed second generation 19 nanometer process technology that it will apply to mass production of 2-bit-per-cell 64Gb NAND memory chips later this month.
The main achievement of this breakthrough in semiconductor manufacturing takes memory cell size from 19nm-by-26nm to 19nm-by-19.5nm, delivering a 25% reduction of the memory cell area and allowing SanDisk and Toshiba to continue leading the industry in building smaller, more powerful flash memory products. The world's smallest 2-bit –per-cell 64Gb NAND memory chip has an area size of only 94mm2.
The new MLC NAND flash memory with proprietary programming algorithms and multi-level data storage management schemes do not sacrifice performance or reliability for manufacturing cost. Using a unique high speed writing method, the next generation chips can achieve a write speed of up to 25MB/s – t he world's fastest class in 2-bit-per-cell chips.
Toshiba is also developing 3-bit-per-cell chips by using this process technology and aims to start mass production in the second quarter of this fiscal year. The company will initially introduce 3-bit, multi-level-cell products for smartphones and tablets by developing a controller compatible with eMMC, and will subsequently extend application to notebook PCs by developing a controller compliant with solid state drives (SSD).
SanDisk will reveal its own-brand products with the latest NAND flash memory produced using second-generation 19nm process technology.