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Adata Technology, one of the world’s largest supplier of memory modules, has formally introduced its lineup of DDR4 dynamic random access memory modules designed for next-generations desktops, notebooks, servers and workstation. The company is on-track to commercially launch DDR4 server solutions in the foreseeable future.

“Targeting server and render farm applications, the new DDR4 modules show that ADATA is once again at the front of the pack in providing new high-performance solutions to the enterprise market,” a statement by Adata reads.

The memory module maker plans to demonstrate its new generation DDR4 SDRAM modules at the Intel Developer Forum 2013 trade-show.

DDR4 has been developed with a range of innovative features designed to enable high speed operation and broad applicability in a variety of applications including servers, laptops, desktop PCs and consumer products. A DDR4 voltage roadmap has been proposed that will facilitate customer migration by holding VDDQ constant at 1.2V and allowing for a future reduction in the VDD supply voltage. The per-pin data rates, over time, will be 1.6 giga transfers per second (GT/s) to an initial maximum objective of 3.2GT/s. Other performance features planned for inclusion in the standard are a pseudo open drain interface on the DQ bus, a geardown mode for 2667MHz data rates and beyond, bank group architecture, internally generated VrefDQ and improved training modes.

Samsung's DDR4 memory modules

The new levels of performance will require a tradeoff. In DDR4 memory sub-systems every memory channel will only support one memory module. As a result, to enable highest-possible memory capacities, DRAM makers will make high-capacity DDR4 chips using through-silicon-via (TSV) technology that will allow to increase capacity of memory chips at a very fast rate. For servers, special switches will be introduced to avoid one module/one channel limitation. As a result, server platforms will be able to accommodate much higher memory capacities than they can do now thanks to new levels of module capacities.

Setting the standard for DDR4 dynamic random access memory (DRAM) type has been going pretty slowly for many reasons. Originally, the DDR4 standard was supposed to be finalized in 2011 and the first production was expected to start in 2012. But after many redesigns and plan changes, the new memory standard will be finalized sometimes late this year and the new memory type will start to be used by Intel Corp.’s Haswell-E, Haswell-EP and Haswell-EX platforms in 2014.

Tags: Adata, Samsung, DDR4, Intel, Haswell, Rockwell, Broadwell, Haswell-EX, DRAM


Comments currently: 2
Discussion started: 09/12/13 04:52:36 PM
Latest comment: 09/13/13 09:47:12 AM


Starting at just 1600 GT/s? Probably with bigger latency than DDR3.

It will be a few years before an upgrade makes sense, but Intel will probably force it asap.
1 0 [Posted by: Harry Lloyd  | Date: 09/12/13 04:52:36 PM]

Yeah, it will be DDR2 vs DDR3 all over again. In this case, only DDR4 modules beyond 3.2GHz will make sense for desktop users.
0 0 [Posted by: TAViX  | Date: 09/13/13 09:47:12 AM]


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