AMD’s Am29PDL640G is a 3.0-volt page-mode Flash memory device that offers 1.8V and 3.0V input and output voltage options, hardware-based simultaneous read/write, and low standby power. This 64Mb device includes the following features and specifications:
- 65 ns initial access times and 25 ns page access times provide up to 80 MB/s intra-page read throughput and 66 MB/s sustained sequential read throughput.
- Eight-word page-mode provides 10% more throughput than competing four-word page-mode Flash and 40% more throughput than competing non-page asynchronous flash.
- Four-bank Simultaneous Read/Write architecture provides high-performance flexibility and less-complicated coding.
- Advanced Sector Protection security provides multiple layers of security to guard against hackers, tuners, viruses, and even erroneous code. 64-bit password protection mode can help ensure that only authorized users change manufacturer-selectable areas of the flash memory.
- Persistent sector protection mode combines two additional protection mechanisms to help guard against viruses and erroneous code.
- The SecSI sector provides a large 256-byte one-time-programmable region for electronic serial numbers and other critical information.
- Enhanced Versatile I/O technology increases design flexibility by enabling separate power supply and I/O voltage levels for the flash memory device. The Am29PDL640G device uses a 3.0 V power supply and can interface with components that use I/O and control pin voltages from the 1.8 V range to the 3.0 V range.
- Standby current as low as 1 µA lengthens battery life during periods of inactivity.
- A pin-compatible upgrade path to 128 Mb, .13 µm flash provides migration flexibility.
- Multi-Chip Package options allow packaging with SRAM and pSRAM.
- Design targets of one million write/erase cycles, 20 years’ data retention at 125 °C help customers to design with confidence.





