OCZ Technology Shrinks Latencies on Extreme-Speed Memory Modules

OCZ’s 550MHz Memory Sticks Now Work with CL2.5

by Anton Shilov
04/12/2004 | 04:05 PM

Historically ultra high speed memory modules were only capable of working at pretty conservative latency settings due to the nature of DRAM technology. Obviously, high latency setting affected efficiency of memory sub-system. OCZ Technology revealed the world’s first 550MHz memory modules capable of operating with CL2.5 settings.


OCZ’s PC4400 Limited Edition Gold EL DDR memory modules are certified to function at 550MHz with CL2.5 4-4-8 settings, which is even more aggressive timings setting than that of the majority of 533MHz DDR memory sticks available today. The manufacturer did not elaborate on the memory chips used with the latest 550MHz memory modules.

To pretty aggressive timings amid ultra high speed for DDR SDRAM possible, OCZ had to pump up the memory voltage of its PC4400 Limited Edition Gold EL DDR to 2.85V, which limits the target market for the products because not a lot of mainboards on the market are capable of delivering 2.85V to RAM. OCZ recommends using P4C800 and P4C800-E mainboards with its new set of dual-channel PC4400 Limited Edition Gold EL DDR memory modules.

High-speed memory modules powered by DDR technology are likely to put more pressure on emerging DDR2 modules in the enthusiast market. Hynix recently said it would mass-produce DDR chips certified to operate at 550MHz, a move that will possibly cause price decline on appropriate memory modules. Given that DDR2 (DDR-II) delivers higher latencies and costs much higher compared to DDR, memory modules like OCZ’s PC4400 Limited Edition Gold EL DDR have every chance to be more optimal choice than the DDR2 initially.

OCZ PC4400 Gold EL DDR 256MB and 512MB modules and 512MB and 1GB dual-channel kits will begin shipping immediately. Pricing may vary from retailer to retailer and from region to region.