by Anton Shilov
11/06/2006 | 11:40 AM
Intel Corp. and Micron Technology announced that their joint-venture IM Flash Technologies will build its fourth manufacturing facility in Singapore. Additionally, the companies said that they were pleased with the progress of their wholly-owned flash memory manufacturing subsidiary.
<%BANNER[article]%>“We are quite pleased with the progress IM Flash Technologies has made in a very short period of time, positioning us for future growth in the NAND marketplace. By executing to our strategy of ramping one 300mm fab per year, we fully expect to become one of the top manufacturers of NAND flash memory,” said Brian Harrison, vice president, general manager, flash memory group, Intel Corporation.
Since the formation of IM Flash in January, the companies have brought online 300mm NAND fabrication facilities in Manassas, Virginia, and a Lehi, Utah, 300mm facility is on track to be in production early next year. The venture also currently produces NAND memory through existing capacity at Micron’s Boise, Idaho, fabrication facilities.
On Monday Intel and Micron announced their intent to form a new joint venture in Singapore that will add a fourth fabrication facility to their NAND flash memory manufacturing capability, subject to execution of final agreements for creation of the joint venture company. The Singapore joint venture’s facility, anticipated to come online in the second half of 2008, will initially use 50nm process technology on 300mm wafers. The Singapore facility is expected to break ground in the first half of next year.