Micron Initiates Flash Memory Production Using 34nm Process Technology

Micron Starts to Produce Flash at 34nm Node

by Anton Shilov
06/30/2009 | 02:00 PM

Micron Technology, one of the world's largest makers of flash memory, on Tuesday said that it had initiated production of flash memory using 34nm process technology. The new multi-level cell memory chips will allow Micron to create more affordable and faster solid-state drives thanks to both 34nm process technology as well as ONFI 2.1 interface.

 

The newly made 32Gb multi-level cell (MLC) NAND chip is 17% smaller than Micron’s first-generation 32Gb chip, whereas the 16Gb MLC NAND chip, at just 84mm², provides high-capacity in an ultra tiny package. Micron is also now sampling 8- and 16Gb single-level cell (SLC) NAND chips using the 34nm process.

Both products feature an ONFI 2.1 synchronous interface that delivers transfer speeds of up to 200MB/s. In comparison, traditional SLC NAND is limited to 40MB/s. With this improved transfer speed, the interface delivers the fastest read and write throughput offered in today’s NAND devices. With solid state drives (SSDs) trending toward a Serial ATA 6 Gb/second interface, the high-speed NAND interface enables manufacturers to design products that deliver twice the throughput of today’s existing SATA 3Gb/s solutions.

"With our new 16- and 32Gb NAND chips in mass production, we are enabling customers to design cost-effective, high-capacity storage in their small-form factor products, using less space and fewer die. In addition, the high-speed interface is ideal in the industry’s quest to continue to increase throughput performance for SSDs," said Brian Shirley, vice president of Micron’s memory group.

Additionally, Lexar Media, a subsidiary of Micron and a leading provider of consumer memory products for digital devices, is taking advantage of Micron’s new 34nm NAND products by delivering a wide range of flash memory cards and USB flash drives utilizing this technology.