by Anton Shilov
10/21/2009 | 11:38 PM
Rambus, a leading developer of high-performance interconnects and memory types, on Wednesday announced it had achieved a new level of power efficiency with its latest silicon test vehicle developed through its Mobile Memory Initiative (MMI).
The latest silicon-validated results demonstrate that through the use of MMI innovations, a high-bandwidth mobile memory controller can achieve power efficiency of 2.2mW/Gbps. This is nearly a one third improvement over the initial MMI silicon and significantly better than the estimated 10mW/Gbps of an LPDDR2 400 memory controller.
“The performance demands of next-generation mobile devices are vastly outstripping the pace of battery technology improvements. With the innovations developed through our Mobile Memory Initiative, we can deliver advanced applications and maintain long battery life through our breakthroughs in both bandwidth performance and power efficiency,” said Martin Scott, senior vice president of research and technology development at Rambus.
Launched in February 2009, Rambus’ MMI focuses on achieving high bandwidth at extremely low power to enable advanced applications in next-generation smartphones, netbooks, portable gaming and portable media products. Operating at 4.3GHz, a 32-bit memory system using MMI innovations can deliver over 17GB/s of memory bandwidth from a single mobile DRAM device.