Samsung Introduces 32GB Memory Module with 40nm DRAMs

Samsung Introduces 32GB LRDIMM

by Anton Shilov
06/30/2010 | 09:09 PM

Samsung Electronics this week said that it had developed the industry's first 32GB  load-reduced, dual-inline memory module (LRDIMM), for server applications. The new memory module is aimed at servers designed for virtualization, cloud computing and other high-capacity applications.

 

The 32GB memory module is based on 72 4Gb DDR3 memory chips made using 40nm-class process technology and an additional memory buffer chip to help reduce the load on the memory subsystem by as much as 75%. The modules operate at 1333MHz and support 1.35V or 1.5V voltage settings.

 “In developing the industry’s first load-reduced module with 40nm-class*DDR3 technology, we are underscoring our determination to combine the best of capacity and performance for the newest generation of servers,” said Dong-Soo Jun, executive vice president of memory marketing at Samsung Electronics.

By using 32GB LRDIMMs, memory capacity can rise up to 384GB per microprocessor in a high-end server with 12 DIMMs per CPU. In a two-way server system, capacity can be increased up to 768GB, or about 1.5 times that of a 512GB server system equipped with 32GB DDR3 RDIMMs.

Samsung will begin mass producing the 32GB LRDIMM in the second half of this year.