Elpida Develops 25nm Process Technology for DRAM Production

Elpida Creates 25nm 2Gb DDR3 Memory Chip

by Anton Shilov
05/02/2011 | 01:55 PM

Elpida Memory, one of the largest memory suppliers in the world, on Monday  announced it had developed a 2Gb DDR3 SDRAM using an industry-leading 25nm process for memory manufacturing. The company claims that the new memory chip is the world's smallest 2Gb dynamic random access memory (DRAM) chip


The 2Gb DDR3 SDRAM chip produced using 25nm process technology can support ultra-high clock-speeds above 1866MHz and is compliant with low-voltage 1.35V high-speed DDR3L-1600MHz standard. The newly developed 25nm DRAM process technology requires 30% less cell area per bit compared with Elpida's 30nm process. The chip output for a 2Gb DDR3 SDRAM wafer using the new process is about 30% higher versus 30nm.

At the time the 25nm process was developed the structural changes required to shift from a 30nm process were minimized to hold down the capital expenditure needed for ramping up 25nm volume manufacturing.

The new 25nm process technology outperforms Elpida's 30nm process products by saving on electric current (15% less operating current and 20% less current when on standby).

Both sample shipments of the new 25nm 2Gb DDR3 SDRAM and volume production are expected to begin in July 2011.

By the end of 2011 Elpida also plans to begin volume production of 4Gb DDR3 SDRAM products using the 25nm process. Compared with the 30nm process a 44% increase in chip output per wafer is expected for this 4Gb DDR3 product.

Separately, Elpida said that Elpida it would start mass produce the 30nm process DRAM at its Hiroshima Plant as well as at Taiwan-based Rexchip Electronics Corporation.

Mass production of 30nm 2Gb DDR3 SDRAM for PC applications will start in May 2011, followed by 4Gb DDR2 Mobile RAM and 4Gb DDR3 SDRAM. Elpida's Hiroshima Plant will devote 20% of its production capacity to manufacturing the new 30nm process DRAM in the second quarter of calendar 2011, which will be ramped up to 30% in the third quarter as the company implements its planned switchover of almost all production lines to cost-effective 30nm and 40nm processes.

Rexchip Electronics will start manufacturing 30nm process DRAM in the third quarter of calendar 2011, with its 30nm lines reaching a production capacity of 50% in that quarter, and possibly reach 100% in the fourth quarter.