by Anton Shilov
02/24/2012 | 12:35 PM
Leading manufacturers of dynamic random access memory (DRAM), Hynix Semiconductor and Samsung Electronics, have demonstrated working DDR4 modules at the International Solid-State Circuits Conference (ISSCC). Interestingly, but other manufacturers of DRAM, refrained from showing off their DDR4 prototypes.
Samsung's DDR4 DRAM module can achieve data transfer rates of 2133Gb/s at 1.2V, compared to 1.35V and 1.5V DDR3 DRAM at an equivalent 30nm-class process technology, with speeds of up to 1.6Gb/s. When applied to a notebook, it reduces power consumption by 40% compared to a 1.5VDDR3 module.
At ISSCC 2012, both Samsung and Hynix demoed already announced DDR4 prototypes with 30nm and 38nm technology nodes, respectively, although mass production will begin later this year at 20nm, reports TechEye web-site. Elpida, Micron and Nanya reportedly did not show DDR4 prototypes at the show.
Hynix's DDR4 device works at 2400MHz (2400Mb/s) and operates at a low voltage of 1.2V and processes up to 19.2GB/s of data per second with a 64-bit I/O.
At present it is expected that DDR4 will be massively adopted by mid-2014, but manufacturers will likely start volume manufacturing of the next-gen DRAM sometimes in 2013.