Samsung Starts to Mass Produce 4Gb LPDDR2 Memory Using 20nm-Class Technology

Samsung Hopes to Boost Amount of RAM Inside Smartphones and Tablets with New Chips

by Anton Shilov
05/17/2012 | 07:50 PM

Samsung Electronics, the world's largest maker of dynamic random access memory, on Thursday said it had begun production of 4Gb [512MB] LPDDR2 1066MHz memory components using 20nm process technology. Such memory solutions should allow to increase the amount of DRAM inside smartphones and tablets to 2GB, which will enable new classes of mobile applications and will let hardware makers to increase screen resolutions on mobile devices without compomising performance.


By stacking four 4Gb LPDDR2 components in a single LPDDR2 package, Samsung can deliver 2GB multi-layer memory solutions that boast thickness of 0.8mm. This new package is approximately 20% thinner than 2GB packages that stack four 30nm-class 4Gb LPDDR2 chips.  The new 2GB package can process data at up to 1066MHz and thanks to thinner process technology promises to provide better energy efficiency compared to previous multi-layer LPDDR2 memory solutions.

“Samsung began expanding the market for 4Gb DRAM last year with the first mass-produced 30nm-class DRAM, and now we are working on capturing most of the advanced memory market with our new 20nm-class 4Gb DRAM,” said Wanhoon Hong, executive vice president of memory sales and marketing at Samsung Electronics.

Economic benefits of the new 20nm-class 4Gb LPDDR2 are projected to help speed up the growth of the 4Gb DRAM market. Samsung now expects the newly introduced 20nm-class 4Gb LPDDR2 will rapidly replace 30nm-class 2Gb-based 1GB LPDDR2 that was in limited supply at the 0.8 mm thickness.

According to IHS iSuppli, shipments of 4Gb LPDDR2 will steadily increase, taking approximately 13% of total mobile DRAM shipments in 2012, 49% in 2013 and 63% in 2014, with 4Gb mobile DRAM monolithic becoming the mainstream chip in the Mobile DRAM market around the end of 2013.

“In the second half of this year, we expect to strongly increase the portion of 20nm-class DRAM within our overall DRAM output to make the 4Gb DRAM line-up the mainstream product in DRAM production, and therefore keeping the leadership position in the premium market and strengthening our competitive edge,” added Wanhoon Hong.