News Archive

December, 2013
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News

Monday, December 30, 2013


SK Hynix Begins to Ship LPDDR4 Samples to Customers. SK Hynix  Hynix  LPDDR4  Apple  Qualcomm  Samsung  DRAM
[10:46 pm]

SK Hynix Reveals Its First LPDDR4 Chips

Samsung Develops Industry’s First 8Gb LPDDR4 Mobile DRAM. Samsung  LPDDR4  LPDDR  DRAM  Mobile DRAM  20nm  8Gb
[2:26 pm]

Samsung Reveals Next-Generation Memory for Mobile Devices

 

Wednesday, December 18, 2013


SK Hynix to Build New DRAM Plant in South Korea. SK Hynix  Hynix  DRAM  Business
[10:46 pm]

SK Hynix to Expand Production of DRAM

 

Tuesday, December 17, 2013


Release of LPDDR4 Standard Due Next Year, But Adoption Will Unlikely Be Fast. LPDDR4  JEDEC  Samsung  Micron  SK Hynix  DRAM
[10:37 pm]

LPDDR4 Could Eventually Hit 4266Mb/s Data Rate

 

Monday, December 16, 2013


Micron to Solve DRAM Timing Challenge with Broadcom. Micron  Broadcom  DDR3  DRAM
[10:00 pm]

Collaboration Addresses Persistent DDR3 tFAW Timing Constraint

 

Tuesday, December 10, 2013


Micron's High-Density 45nm Serial NOR Flash Doubles Programming Speed for Embedded Applications. Micron  NOR  Flash  45nm
[10:05 pm]

Micron Introduces Industry's First 2Gb Serial NOR Device

 

Monday, December 9, 2013


Micron and Rambus Settle All Legal Disputes. Rambus  Micron  DRAM  NAND  Flash  DDR  DDR2  DDR3  DDR4  GDDR  GDDR5
[9:13 pm]

Rambus and Micron Sign License Agreement