News
 

Bookmark and Share

(0) 

The market for cellular 3G modems is in flux as the technology advances rapidly and a growing range of devices have the opportunity to leverage wireless broadband. However, price erosion is constraining revenue growth as unit shipments continue to soar, claims In-Stat market research firm.

“The average selling price (ASP) of external or USB modems dropped more than 25% in 2009 to below $65 per unit in 2009. However price erosion will moderate in coming years, as multi-mode modems that also support WiMax, Wi-Fi or LTE gain ground,” said Allen Nogee, an In-Stat analyst.

In 2010, the market for 3G cellular modems (aside from mobile handset modems) will be worth over $3.5 billion. The external 3G cellular modem segment is larger than the embedded modem segment in 2010, but embedded modems are on a path to surpass external 3G modems.

The top reason cited by respondents to an In-Stat survey that made them averse to using cellular broadband services was slow performance.

Tags: 3G, LTE, WiMAX, Wi-Fi

Discussion

Comments currently: 0

Add your Comment

[Login] [Forgot password?] [Registration]




Related news

Latest News

Friday, May 25, 2012

1:09 pm | Toshiba Pulls the Plug on Netbooks in the U.S. Toshiba Abandons Netbook Product Line

Thursday, May 24, 2012

11:25 pm | Nvidia's Affordable 4G/LTE Modem Certified by AT&T. Nvidia's Icera 410 4G/LTE Modem May Power Affordable Devices

10:00 pm | Microsoft Clarifies Its Exec's Claims: 500 Million Windows 8 Copies in 2013 Are "Potential" Upgrades. Microsoft Retracts Statement Regarding 500 Million Windows 8 Licenses to Be Sold in 2013

8:35 pm | ECS Reveals "NonStop" Mainboard Family with Extended Stability and Reliability. ECS Boosts Stability and Reliability with Premium Components and Rigorous Testing on NonStop Platforms

6:28 pm | AMD Rumoured to Start Production of Next-Gen FX-Chips in Q3. AMD to Start Making FX "Vishera" Chips Next Quarter

11:32 am | UMC Begins to Build Fab to Make 28nm, 20nm and 14nm Chips. UMC Spends $8 Billion on Expansion, Confirms Development of 14nm FinFET Process Technology