News
 

Bookmark and Share

(1) 

At the International Conference on Solid State Devices and Materials in Tokyo, AMD researchers detailed their creation of new triple-gate transistors using next-generation silicon-on-insulator (SOI) and advanced metal gate technologies.

The research presented today maximizes transistor switching performance and decreases power-wasting leakage by combining several highly advanced technologies into a single structure.

A unique ultra-thin electrical path using fully depleted silicon-on-insulator (FDSOI) technology is surrounded on three sides with nickel-silicide metal gates. This combination of FDSOI and nickel-silicide metal gates has the effect of straining the silicon lattice within the electrical path to enhance carrier mobility.

Furthermore, the multi-gate, FDSOI structure increases the effective width of the electrical path in the transistor and also provides better electrical control of this path. These factors combine to provide higher “on” current, lower “off” current and faster switching, thereby increasing the overall transistor performance.

AMD’s design delivers up to 50% better performance than any previously published multi-gate research. This surpasses 2009 requirements set by the International Technology Roadmap for Semiconductors (ITRS), but because the design is also highly compatible with current manufacturing techniques, AMD views this technology as a leading candidate for volume production as early as 2007.

Discussion

Comments currently: 1
Discussion started: 09/19/03 10:26:21 AM
Latest comment: 09/19/03 10:26:21 AM

Add your Comment




Related news

Latest News

Monday, July 21, 2014

12:56 pm | Microsoft to Fire 18,000 Employees to Boost Efficiency. Microsoft to Perform Massive Job Cut Ever Following Acquisition of Nokia

Tuesday, July 15, 2014

6:11 am | Apple Teams Up with IBM to Make iPhone and iPad Ultimate Tools for Businesses and Enterprises. IBM to Sell Business-Optimized iPhone and iPad Devices

Monday, July 14, 2014

6:01 am | IBM to Invest $3 Billion In Research of Next-Gen Chips, Process Technologies. IBM to Fund Development of 7nm and Below Process Technologies, Help to Create Post-Silicon Future

5:58 am | Intel Postpones Launch of High-End “Broadwell-K” Processors to July – September, 2015. High-End Core i “Broadwell” Processors Scheduled to Arrive in Q3 2015

5:50 am | Intel Delays Introduction of Core M “Broadwell” Processors Further. Low-Power Broadwell Chips Due in Late 2014