Intel Corp. today announced it has become the first company to reach a milestone in the development of 45nm logic technology. Intel has produced what are believed to be the first fully functional SRAM (Static Random Access Memory) chips using 45nm process technology, its next-generation, high-volume semiconductor manufacturing process.

“Our 45nm technology will provide the foundation for delivering PCs with improved performance-per-watt that will enhance the user experience,” said Bill Holt, vice president, general manger, Intel technology and manufacturing group.

Intel’s 45nm process technology will allow chips with more than five times less leakage power than those made today, according to the company. This will improve battery life for mobile devices and increase opportunities for building smaller, more powerful platforms.

The 45nm SRAM chip has more than 1 billion transistors. Though not intended as an Intel product, the SRAM demonstrates technology performance, process yield and chip reliability prior to ramping processors and other logic chips using the 45nm manufacturing process. It is a key first step in the march toward high-volume manufacturing of the world’s most complex devices.

Achieving this milestone means Intel is on track to manufacture chips with this technology in 2007 using 300mm wafers, and continues the company’s focus on pushing the limits of Moore’s Law, by introducing a new process generation every two years.

In addition to the manufacturing capabilities of its D1D facility in Oregon, where the initial 45nm development efforts are underway, Intel has announced two high-volume fabs under construction to manufacture chips using the 45nm process technology: Fab 32 in Arizona and Fab 28 in Israel.

Today, Intel operates two manufacturing facilities making 65nm chips in Arizona and Oregon and two more coming online this year in Ireland and Oregon.