Intel Corp. announced on Monday that it will invest $1 billion to $1.5 billion in its Rio Rancho site to retool Fab 11X for production using 45nm manufacturing process. Fab 11X will be the company’s fourth factory scheduled to use the 45nm process, with production in
“Our new 45 nanometer process represents one of the most significant manufacturing breakthroughs in decades and we believe that putting it in our factory in
Initial production of Intel’s 45nm products will be done at its
Fab 11X currently manufactures 90nm computer chips on 300mm wafers. Fab 11X began production in October 2002 and was Intel’s first 300mm, high-volume manufacturing facility. It was also Intel’s first fully automated, high volume factory producing 300mm wafers.
Intel’s 45nm high-k and metal gate process consists of an innovative combination of new transistor materials that reduces transistor leakage and increases performance. When 45nm production begins later this year, the company will use a new material with a higher-k (dielectric constant), and a new combination of metal materials for the transistor gate electrode. First commercial 45nm chips from Intel will emerge in the second half of 2007.