News
 

Bookmark and Share

(4) 

Globalfoundries on Thursday unveiled the details about the world's first 14nm-XM [extreme mobility] process technology that utilizes three-dimensional “FinFET” transistors. The new tech will help to cut down power consumption of system-on-chips by about two times when compared to chips made using 20nm technology. The most surprising thing is that mass production is slated on 2014, which means at the same time with Intel Corp., ahead of other foundries.

The 14nm-XM offering is based on a modular technology architecture that uses a 14nm FinFET devices combined with 20nm-LPM process back-end-of-line (BEOL) interconnect flow. Leveraging the maturity of the 20nm-LPM technology will enable a rapid time-to-market as well as a smooth transition for customers looking to tap the benefits of FinFET system-on-chips as soon as possible. According to Globalfoundries, 14-nm FinFETs have a 48-nm fin pitch, which is identical to what Globalfoundries expects about Intel's FinFET fabrication process.

The FinFET architecture takes the traditional two-dimensional transistor design and turns the conductive channel on its side, resulting in a three-dimensional “fin” structure surrounded by a gate that controls the flow of current. A key benefit of FinFET technology is its superior low-power attributes. The 3D transistor design intrinsically operates at a lower voltage with minimal current leakage, which translates into longer battery life for mobile applications or less power consumption for plugged-in applications such as networking chips in datacenters.

When compared to today’s 20nm planar technology, 14nm-XM is expected to deliver a 40% - 60% improvement in battery life and between 20% - 55% higher performance depending on operating voltage. Technology development is already underway, with test silicon running through Globalfoundries’ Fab 8 in Saratoga County, N.Y. Early process design kits (PDKs) are available now, with customer tape-outs expected in 2013.

“We have more than a decade of FinFET R&D to build on as we prepare to bring this technology to production. We are confident this foundation will enable us to lead the foundry volume ramp of FinFETs, just as we did with high-K metal gate (HKMG),” said Gregg Bartlett, chief technology officer at Globalfoundries.

Globalfoundries said it has developed a new approach to technology definition that has resulted in a cost-effective and power-optimized FinFET technology that is well suited for the mobile SoC market. The 14nm-XM architecture strikes the ideal balance between performance and power consumption, while minimizing both die size and cost. At the same time, the technology has been architected for optimum manufacturability and ease of design, with a view to allowing designers to re-use much of their IP from previous generations. Additionally, consideration is given to SoC-level concerns beyond the transistor architecture, such as overall system-level performance and specific mobile applications needs.

Tags: Globalfoundries, 14nm, FinFET, Semiconductor, Intel, TSMC, UMC

Discussion

Comments currently: 4
Discussion started: 09/20/12 02:02:25 PM
Latest comment: 09/23/12 12:09:16 AM

[1-4]

1. 
TSMC started producing 28nm low-power a good year before HP (2010 v 2011). Continuing that rough cadence, and 20nm coming next year, 2014 makes sense for an early form of 14nm (or half-node of 20nm from tsmc). Obviously GF knows what they need to do to remain competitive, and this sounds about right.

Given their track record...this is impressive or just plain optimistic. Either they had some massive breakthroughs and/or got away from impediments by going to gate-last, or this is simply salesmanship they are hoping we forget next time they mention a date and it has changed. We all know fab companies like to do that.

I would love to see both the 28nm chips they produced in 2011, as well as their 20nm chips coming next year...because I think we all know that's for all intents and purposes bullshit...unless they are talking about trial wafers (that have no practical use or meaning to anybody if mass production doesn't follow soon after) or are using tsmc's timeline.
2 0 [Posted by: turtle  | Date: 09/20/12 02:02:25 PM]
Reply

2. 
At the rate they have been going I'd expect mass production 22nm at 2014, so somehow I think they are being a tad over optimistic.
2 0 [Posted by: daneren2005  | Date: 09/20/12 05:39:52 PM]
Reply

3. 
Where's the limit of silicon?
0 0 [Posted by: Filiprino  | Date: 09/21/12 12:02:20 PM]
Reply

4. 
Wanna know when Intel has 14 nm tapeout? December...this year.
0 0 [Posted by: AnonymousGuy  | Date: 09/23/12 12:09:16 AM]
Reply

[1-4]

Add your Comment




Related news

Latest News

Thursday, August 28, 2014

12:22 pm | AMD Has No Plans to Reconsider Recommended Prices of Radeon R9 Graphics Cards. AMD Will Not Lower Recommended Prices of Radeon R9 Graphics Solutions

Wednesday, August 27, 2014

9:09 pm | Samsung Begins to Produce 2.13GHz 64GB DDR4 Memory Modules. Samsung Uses TSV DRAMs for 64GB DDR4 RDIMMs

Tuesday, August 26, 2014

6:41 pm | AMD Quietly Reveals Third Iteration of GCN Architecture with Tonga GPU. AMD Unleashes Radeon R9 285 Graphics Cards, Tonga GPU, GCN 1.2 Architecture

Monday, August 25, 2014

6:05 pm | Chinese Inspur to Sell Mission-Critical Servers with AMD Software, Power 8 Processors. IBM to Enter Chinese Big Data Market with the Help from Inspur

Sunday, August 24, 2014

6:12 pm | Former X-Bit Labs Editor Aims to Wed Tabletop Games with Mobile Platforms. Game Master Wants to Become a New World of Warcraft