AMD Announces the Announcement of Next-Generation SOI Transistors

by Anton Shilov
04/02/2003 | 06:56 AM

AMD researchers have become the first in the semiconductor industry to achieve critical research milestones for next-generation transistor development, the company said today.

In lab work to be fully unveiled in June, AMD researchers have created and demonstrated a high-performance transistor that is up to 30% faster than the best published PMOS (P-channel metal-oxide semiconductor) transistor today. The transistor employs proprietary AMD technologies involving what is commonly referred to as Fully Depleted Silicon-on-Insulator.

In related research, AMD researchers have also become the first in the industry to demonstrate a strained silicon transistor achieving 20-25% higher performance than conventional strained silicon devices through the successful use of metal gates.

These latest research achievements are expected to play a critical role in semiconductor manufacturing in the second half of this decade. Both will be presented in detail at this year’s VLSI Symposium June 11 and 12 in Kyoto, Japan, where AMD will publish the research for the first time.