TSMC Adds Another Option to 28nm Process Tech Lineup

TSMC Includes Low-Power HKMG Fabrication Process to Plans

by Anton Shilov
08/25/2009 | 12:14 PM

Taiwan Semiconductor Manufacturing Company this week added a 28nm low-power process technology with high-K metal gate dielectrics. Earlier the company offered only high-performance 28nm HKMG fabrication process as well as low-power 28nm process technology with silicon oxinitride/poly (SiON/Poly) dielectrics. The new process is expected to enter risk production in the third quarter of 2010.

 

“TSMC has been working with customers over a significant period of time to develop high-k metal gate technologies for low power applications. The addition of the 28nm HPL to the 28nm technology family, combined with the 28LP and 28HP, means that TSMC now provides the most comprehensive 28nm technology portfolio,” said Dr. Mark Liu, senior vice president of advanced technology business at TSMC.

At present TSMC has three different 28nm fabrication processes:

TSMC’s 28nm development and ramp has remained on schedule since the company announced the technology in September 2008, according to TSMC.

The 28HP process, TSMC’s first HKMG technology, offers over 30% higher speed than TSMC’s 40nm general purpose (40G) process at similar power density.