by Anton Shilov
03/20/2012 | 10:29 PM
At the Common Platform Technology Forum (CPTF) a vice president of Globalfoundries said that his company's approach to multiple gate field-effect transistor (MuGFET)-based process technologies is better optimized for next-generation mobile system-on-chips (SoCs) than that of Intel Corp.'s. It is expected that CPTF and Globalfoundries will implement FinFETs (double-gate transistors) into its 14nm process tech in three-four years from now.
“We believe we have a much better finFET, that is optimised for mobile SoCs,” said Subramani Kengeri, vice president of design solutions at Globalfoundries, reports ElectroIQ web-site.
Development of FinFETs was started around ten years ago by Advanced Micro Devices and then was continued by Globalfoundries. At present Globalfoundries claims that FinFETs will be utilized along with 14nm process technologies, which is likely enter mass production in 2015 - 2016 timeframe.
Intel itself does not refer to its 22nm process technology with tri-gate transistors as to FinFETs, therefore, Globalfoundries may have formal right at this point of time to call its approach more advanced as Intel's tri-gate is a somewhat simplified approach to MuGFET. What will be interesting to see actual yields and actual performance improvements from both approaches. Moreover, Intel can use different type of transistors with its 14nm process technology compared to 22nm fabrication tech.